ONSEMI NTP75N03-006
Manufacturer No:
NTP75N03-006
Manufacturer:
ONSEMI
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 6.5m ? @ 37.5A, 10V ±20V 5635pF @ 25V 75nC @ 5V TO-220-3
Quantity:
In Stock :7122
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Shipped from：HK Warehouse
Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NTP75N03-006 Information
ONSEMI NTP75N03-006 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI NTP75N03-006.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Published
- 2003
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Voltage - Rated DC
- 30V
- Technology
- MOSFET (Metal Oxide)
- Type
- Parameter
- Current Rating
- 75A
- Power Dissipation-Max
- 2.5W Ta 125W Tc
- Element Configuration
- Single
- Power Dissipation
- 2.5W
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 6.5m ? @ 37.5A, 10V
- Vgs(th) (Max) @ Id
- 2V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 5635pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 75A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 75nC @ 5V
Download datasheets and manufacturer documentation for ONSEMI NTP75N03-006.
Datasheets:
ReachStatement:
NTP75N03-006 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5635pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 65 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
NTP75N03-006 Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 65 ns
NTP75N03-006 Applications
There are a lot of ON Semiconductor
NTP75N03-006 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
