ONSEMI NTMS4700NR2
Manufacturer No:
NTMS4700NR2
Manufacturer:
ONSEMI
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 7.2m ? @ 13A, 10V ±20V 1600pF @ 24V 24nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :2868
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Shipped from：HK Warehouse
Expected Shipping：Wed, May 27 - Thu, May 28, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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NTMS4700NR2 Information
ONSEMI NTMS4700NR2 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI NTMS4700NR2.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins
- 8
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2006
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 8
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Lead (Sn/Pb)
- Voltage - Rated DC
- 30V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 240
- Reach Compliance Code
- not_compliant
Download datasheets and manufacturer documentation for ONSEMI NTMS4700NR2.
Datasheets:
ReachStatement:
NTMS4700NR2 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1600pF @ 24V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 8.6A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 29.5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
NTMS4700NR2 Features
a continuous drain current (ID) of 8.6A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 29.5 ns
NTMS4700NR2 Applications
There are a lot of ON Semiconductor
NTMS4700NR2 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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