ONSEMI NTB65N02RG
Manufacturer No:
NTB65N02RG
Manufacturer:
ONSEMI
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tube 8.2m ? @ 30A, 10V ±20V 1330pF @ 20V 9.5nC @ 4.5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :1418
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Shipped from：HK Warehouse
Expected Shipping：Sat, Jun 6 - Sun, Jun 7, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NTB65N02RG Information
ONSEMI NTB65N02RG technical specifications, attributes, parameters and parts with similar specifications to ONSEMI NTB65N02RG.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Published
- 2008
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 25V
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Current Rating
- 65A
Download datasheets and manufacturer documentation for ONSEMI NTB65N02RG.
Datasheets:
ReachStatement:
NTB65N02RG Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 60 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1330pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 65A amps.In this device, the drain-source breakdown voltage is 24V and VGS=24V, so the drain-source breakdown voltage is 24V in this case.A device can conduct a maximum continuous current of [7.6A] according to its drain current.It is [14 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 160A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
NTB65N02RG Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 65A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 14 ns
based on its rated peak drain current 160A.
NTB65N02RG Applications
There are a lot of ON Semiconductor
NTB65N02RG applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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