Renesas NP48N055KLE-E1-AY
Manufacturer No:
NP48N055KLE-E1-AY
Manufacturer:
Renesas
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 17m ? @ 24A, 10V ±20V 3000pF @ 25V 60nC @ 10V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :6053
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NP48N055KLE-E1-AY Information
Renesas NP48N055KLE-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP48N055KLE-E1-AY.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 175°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2007
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- HTS Code
- 8541.29.00.95
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Pin Count
- 3
- JESD-30 Code
- R-PSSO-G2
Download datasheets and manufacturer documentation for Renesas NP48N055KLE-E1-AY.
ConflictMineralStatement:
NP48N055KLE-E1-AY Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 48A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 54 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 140A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 17 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 55V in order to maintain normal operation.Operating this transistor requires a 55V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
NP48N055KLE-E1-AY Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 48A
the turn-off delay time is 54 ns
based on its rated peak drain current 140A.
a 55V drain to source voltage (Vdss)
NP48N055KLE-E1-AY Applications
There are a lot of Renesas Electronics America
NP48N055KLE-E1-AY applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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