Renesas NP36P06KDG-E2-AY
Manufacturer No:
NP36P06KDG-E2-AY
Manufacturer:
Renesas
Package:
Description:
Pch Power MOSFET -60V -36A 29.5mohm TO-263 / D2PAK for Automotive
Quantity:
In Stock :1778
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Shipped from：HK Warehouse
Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NP36P06KDG-E2-AY Information
Renesas NP36P06KDG-E2-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP36P06KDG-E2-AY.
- Type
- Parameter
- Lead Count (#)
- 3
- Carrier Type
- Embossed Tape
- Moisture Sensitivity Level (MSL)
- 1
- Pb (Lead) Free
- Yes
- Channels (#)
- 1
- Ciss (Typical) (pF)
- 3100
- ID (A)
- -36
- Lead Compliant
- No
- Length (mm)
- 10
- MOQ
- 800
- Type
- Parameter
- Mounting Type
- Surface Mount
- Nch/Pch
- Pch
- Pch (W)
- 56
- Pkg. Type
- MP-25ZK
- Qg typ (nC)
- 54
- Qualification Level
- Automotive
- RDS (ON) (Max) @10V or 8V (mohm)
- 29.5
- RDS (ON) (Max) @ 4V or 4.5V or 5V (m ohm)
- 37.5
- RDS (ON) (Typical) @ 10V / 8V (mohm)
- 23.1
- Series Name
- NP Series
Download datasheets and manufacturer documentation for Renesas NP36P06KDG-E2-AY.
The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
- Super low on-state resistance RDS(on)1 = 29.5 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 37.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A)
- Low input capacitance Ciss = 3100 pF TYP.
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12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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