Renesas NP36P06KDG-E1-AY

Manufacturer No:

NP36P06KDG-E1-AY

Manufacturer:

Renesas

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 29.5m ? @ 18A, 10V ±20V 3100pF @ 10V 54nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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NP36P06KDG-E1-AY information

Renesas NP36P06KDG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP36P06KDG-E1-AY.

Type
Parameter

Factory Lead Time
16 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material
SILICON

Operating Temperature
175°C TJ

Packaging
Tape & Reel (TR)

Published
2007

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

ECCN Code
EAR99

HTS Code
8541.29.00.95

Subcategory
Other Transistors

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Pin Count
3

JESD-30 Code
R-PSSO-G2

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
1.8W Ta 56W Tc

Operating Mode
ENHANCEMENT MODE

Case Connection
DRAIN

FET Type
P-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
29.5m ? @ 18A, 10V

Vgs(th) (Max) @ Id
2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
3100pF @ 10V

Current - Continuous Drain (Id) @ 25°C
36A Tc

Gate Charge (Qg) (Max) @ Vgs
54nC @ 10V

Rise Time
11ns

Drain to Source Voltage (Vdss)
60V

Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V

Vgs (Max)
±20V

Fall Time (Typ)
110 ns

Turn-Off Delay Time
210 ns

Continuous Drain Current (ID)
36A

Gate to Source Voltage (Vgs)
20V

Drain-source On Resistance-Max
0.0375Ohm

Pulsed Drain Current-Max (IDM)
108A

DS Breakdown Voltage-Min
60V

Avalanche Energy Rating (Eas)
54 mJ

Radiation Hardening
No

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for Renesas NP36P06KDG-E1-AY.

Datasheets:

renesaselectronicsamerica-np36p06kdge1ay-datasheets-4681.pdf

ConflictMineralStatement:

nec-dn1c100m1s-conflictmineralstatement-8243.pdf

NP36P06KDG-E1-AY Overview

Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 54 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3100pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 36A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 210 ns.Peak drain current for this device is 108A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 60V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

NP36P06KDG-E1-AY Features

the avalanche energy rating (Eas) is 54 mJ
a continuous drain current (ID) of 36A
the turn-off delay time is 210 ns
based on its rated peak drain current 108A.
a 60V drain to source voltage (Vdss)

NP36P06KDG-E1-AY Applications

There are a lot of Renesas Electronics America
NP36P06KDG-E1-AY applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

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