
ONSEMI NCP5355D
Manufacturer No:
NCP5355D
Manufacturer:
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
12 V Synchronous Buck Power MOSFET Driver
Quantity:
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NCP5355D Information
ONSEMI NCP5355D technical specifications, attributes, parameters and parts with similar specifications to ONSEMI NCP5355D.
- Type
- Parameter
- Power Switch
- -
- Topology
- -
- Isolation Type
- -
- Vin Max (V)
- -
- Fall Time (ns)
- 15
- MSL Temp (°C)
- 235
- Container Type
- TUBE
- Turn Off Prop. Delay Typ (ns)
- -
- Case Outline
- 751-07
- Rise Time (ns)
- 15
- Type
- Parameter
- Drive Source Current Typ (A)
- -
- Number of Outputs
- 2
- MSL Type
- 1
- Container Qty.
- 98
- VCC Max (V)
- 13.2
- Drive Sink Current Typ (A)
- -
- Turn On Prop. Delay Typ (ns)
- -
- Delay Matching
- -
- Package Type
- SOIC-8
Download datasheets and manufacturer documentation for ONSEMI NCP5355D.
Datasheet:
Package Drawing:
The NCP5355 is a dual MOSFET gate driver optimized to drive the gates of both high- and low-side Power MOSFETs in a Synchronous Buck converter. The NCP5355 is an excellent companion to multiphase controllers that do not have integrated gate drivers, such as onsemi's NCP5314 or NCP5316. This architecture provides the power supply designer greater flexibility by being able to locate the gate drivers close to the MOSFETs.
Feature
- 8.0-14V Gate Drive Capability
- 2.0A Peak Drive Current
- Rise and Fall Times <15ns Typical into 3300 pF
- Propagation Delay from Inputs to Outputs <30ns
- Adaptive Nonoverlap Time Optimized for Large Power MOSFETs
- Floating Top Driver Accommodates Applications Up to 26V
- Undervoltage Lockout to Prevent Switching when the Input Voltage is Low
- Thermal Shutdown Protection Against Overtemperature
- TG to DRN Pull-Down Resistor Prevents HV Supply-Induced Turn On of Top MOSFET
- BG to PGND Pull-Down Resistor Prevents Transient Turn On of Bottom MOSFET
- Internal Bootstrap Diode Reduces Parts Count and Total Solution Cost
- Pb-Free Package is Available
NCP5355D Relevant information
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