ONSEMI MTP50P03HDL
Manufacturer No:
MTP50P03HDL
Manufacturer:
ONSEMI
Package:
TO-220-3
Description:
Power MOSFET -30V -50A 25 mOhm Single P-Channel TO-220 Logic Level
Quantity:
In Stock :3747
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Step6：Packaging Box
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MTP50P03HDL Information
ONSEMI MTP50P03HDL technical specifications, attributes, parameters and parts with similar specifications to ONSEMI MTP50P03HDL.
- Type
- Parameter
- MSL Type
- NA
- Wide SOA Mosfets
- 0
- Package Type
- TO-220-3
- V(BR)DSS Min (V)
- 30
- RDS(on) Max @ VGS = 2.5 V (mΩ)
- -
- Case Outline
- 221A
- ID Max (A)
- 50
- RDS(on) Max @ VGS = 4.5 V (mΩ)
- 25
- Qrr Typ (nC)
- 0.246
- Crss Typ (pF)
- 550
- Type
- Parameter
- Container Type
- TUBE
- Silicon Family
- PowerTrench® T1
- Qg Typ @ VGS = 10 V (nC)
- 74
- Ciss Typ (pF)
- 3500
- Qgd Typ @ VGS = 4.5 V (nC)
- -
- MSL Temp (°C)
- 0
- Configuration
- Single
- Coss Typ (pF)
- 1500
- Container Qty.
- 50
- Channel Polarity
- P-Channel
Download datasheets and manufacturer documentation for ONSEMI MTP50P03HDL.
Datasheet:
Package Drawing:
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Feature
- Avalanche Energy Specified
- Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- Pb-Free Packages are Available
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12.28 M
Listed Part Number
3,000+
Leading Manufacturers
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In-stock SKU
15,000+
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