ONSEMI MPSW01ARLRA
Manufacturer No:
MPSW01ARLRA
Manufacturer:
ONSEMI
Package:
TO-226-3, TO-92-3 Long Body (Formed Leads)
Description:
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Reel (TR) Through Hole
Quantity:
In Stock :8725
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Shipped from：HK Warehouse
Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
MPSW01ARLRA Information
ONSEMI MPSW01ARLRA technical specifications, attributes, parameters and parts with similar specifications to ONSEMI MPSW01ARLRA.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2005
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Lead (Sn/Pb)
- HTS Code
- 8541.29.00.75
- Subcategory
- Other Transistors
- Voltage - Rated DC
- 40V
- Max Power Dissipation
- 1W
- Terminal Position
- BOTTOM
- Peak Reflow Temperature (Cel)
- 240
- Reach Compliance Code
- not_compliant
Download datasheets and manufacturer documentation for ONSEMI MPSW01ARLRA.
Datasheets:
PCN Obsolescence/ EOL:
ReachStatement:
MPSW01ARLRA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
MPSW01ARLRA Features
the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 50MHz
MPSW01ARLRA Applications
There are a lot of ON Semiconductor
MPSW01ARLRA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
