ONSEMI MPS6652RLRA

Manufacturer No:

MPS6652RLRA

Manufacturer:

ONSEMI

Package:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Description:

PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

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MPS6652RLRA information

ONSEMI MPS6652RLRA technical specifications, attributes, parameters and parts with similar specifications to ONSEMI MPS6652RLRA.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
2006

JESD-609 Code
e0

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
Tin/Lead (Sn/Pb)

HTS Code
8541.21.00.95

Subcategory
Other Transistors

Voltage - Rated DC
-40V

Max Power Dissipation
625mW

Terminal Position
BOTTOM

Peak Reflow Temperature (Cel)
240

Reach Compliance Code
not_compliant

Current Rating
-1A

Time@Peak Reflow Temperature-Max (s)
30

Base Part Number
MPS6652

Pin Count
3

Qualification Status
Not Qualified

Number of Elements
1

Element Configuration
Single

Transistor Application
AMPLIFIER

Gain Bandwidth Product
100MHz

Polarity/Channel Type
PNP

Transistor Type
PNP

Collector Emitter Voltage (VCEO)
600mV

Max Collector Current
1A

DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 500mA 1V

Current - Collector Cutoff (Max)
100nA

Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A

Collector Emitter Breakdown Voltage
40V

Current - Collector (Ic) (Max)
1A

Transition Frequency
100MHz

Collector Emitter Saturation Voltage
600mV

Collector Base Voltage (VCBO)
45V

Emitter Base Voltage (VEBO)
4V

hFE Min
50

Turn Off Time-Max (toff)
300ns

Turn On Time-Max (ton)
55ns

RoHS Status
RoHS Compliant

Lead Free
Contains Lead

Download datasheets and manufacturer documentation for ONSEMI MPS6652RLRA.

MPS6652RLRA Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 500mA 1V DC current gain.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 1A volts.

MPS6652RLRA Features

the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 4V
the current rating of this device is -1A
a transition frequency of 100MHz

MPS6652RLRA Applications

There are a lot of ON Semiconductor
MPS6652RLRA applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

PURCHASE

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