ONSEMI MPS6601RLRA

Manufacturer No:

MPS6601RLRA

Manufacturer:

ONSEMI

Package:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Description:

NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

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MPS6601RLRA information

ONSEMI MPS6601RLRA technical specifications, attributes, parameters and parts with similar specifications to ONSEMI MPS6601RLRA.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
2006

JESD-609 Code
e0

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
Tin/Lead (Sn/Pb)

HTS Code
8541.21.00.95

Subcategory
Other Transistors

Voltage - Rated DC
25V

Max Power Dissipation
625mW

Terminal Position
BOTTOM

Peak Reflow Temperature (Cel)
240

Reach Compliance Code
not_compliant

Current Rating
1A

Time@Peak Reflow Temperature-Max (s)
30

Base Part Number
MPS6601

Qualification Status
Not Qualified

Number of Elements
1

Element Configuration
Single

Transistor Application
AMPLIFIER

Gain Bandwidth Product
100MHz

Polarity/Channel Type
NPN

Transistor Type
NPN

Collector Emitter Voltage (VCEO)
25V

Max Collector Current
1A

DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 500mA 1V

Current - Collector Cutoff (Max)
100nA

Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A

Collector Emitter Breakdown Voltage
25V

Transition Frequency
100MHz

Collector Emitter Saturation Voltage
600mV

Collector Base Voltage (VCBO)
25V

Emitter Base Voltage (VEBO)
4V

hFE Min
50

Turn On Time-Max (ton)
55ns

RoHS Status
RoHS Compliant

Lead Free
Contains Lead

Download datasheets and manufacturer documentation for ONSEMI MPS6601RLRA.

MPS6601RLRA Overview

In this device, the DC current gain is 50 @ 500mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 100mA, 1A.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

MPS6601RLRA Features

the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 4V
the current rating of this device is 1A
a transition frequency of 100MHz

MPS6601RLRA Applications

There are a lot of ON Semiconductor
MPS6601RLRA applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

PURCHASE

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SHIPPING COST

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.