ONSEMI MPS4250ARLRM
Manufacturer No:
MPS4250ARLRM
Manufacturer:
ONSEMI
Package:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Description:
PNP -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
Quantity:
In Stock :8300
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Shipped from：HK Warehouse
Expected Shipping：Sun, Jun 7 - Mon, Jun 8, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
MPS4250ARLRM Information
ONSEMI MPS4250ARLRM technical specifications, attributes, parameters and parts with similar specifications to ONSEMI MPS4250ARLRM.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Box (TB)
- Published
- 2006
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Finish
- Tin/Lead (Sn/Pb)
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -40V
- Max Power Dissipation
- 625mW
- Terminal Position
- BOTTOM
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Current Rating
- -10mA
Download datasheets and manufacturer documentation for ONSEMI MPS4250ARLRM.
Datasheets:
PCN Obsolescence/ EOL:
ReachStatement:
MPS4250ARLRM Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 10mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 500?A, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -10mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 50mA volts.
MPS4250ARLRM Features
the DC current gain for this device is 250 @ 10mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 500?A, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is -10mA
MPS4250ARLRM Applications
There are a lot of ON Semiconductor
MPS4250ARLRM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
