

ONSEMI MPS4250ARLRM
Manufacturer No:
MPS4250ARLRM
Manufacturer:
Package:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Description:
PNP -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
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MPS4250ARLRM information
ONSEMI MPS4250ARLRM technical specifications, attributes, parameters and parts with similar specifications to ONSEMI MPS4250ARLRM.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Box (TB)
- Published
- 2006
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Finish
- Tin/Lead (Sn/Pb)
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -40V
- Max Power Dissipation
- 625mW
- Terminal Position
- BOTTOM
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Current Rating
- -10mA
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Base Part Number
- MPS4250
- Pin Count
- 3
- Qualification Status
- Not Qualified
- Element Configuration
- Single
- Power Dissipation
- 625W
- Power - Max
- 625mW
- Polarity/Channel Type
- PNP
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 250mV
- Max Collector Current
- 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 250 @ 10mA 5V
- Current - Collector Cutoff (Max)
- 10nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 500?A, 10mA
- Collector Emitter Breakdown Voltage
- 40V
- Collector Emitter Saturation Voltage
- -250mV
- Max Breakdown Voltage
- 40V
- Collector Base Voltage (VCBO)
- -40V
- Emitter Base Voltage (VEBO)
- 5V
- hFE Min
- 250
- RoHS Status
- RoHS Compliant
- Lead Free
- Contains Lead
Download datasheets and manufacturer documentation for ONSEMI MPS4250ARLRM.
Datasheets:
PCN Obsolescence/ EOL:
ReachStatement:
MPS4250ARLRM Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 10mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 500?A, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -10mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 50mA volts.
MPS4250ARLRM Features
the DC current gain for this device is 250 @ 10mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 500?A, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is -10mA
MPS4250ARLRM Applications
There are a lot of ON Semiconductor
MPS4250ARLRM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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