Microchip MIC5019YFT-TR

Manufacturer No:

MIC5019YFT-TR

Manufacturer:

Microchip

Package:

4-UDFN Exposed Pad, 4-TMLF®

Description:

Ultra-Small High Side MOSFET Gate Driver with Charge Pump

Quantity:

Delivery:

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In Stock :Available

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MIC5019YFT-TR information

Microchip MIC5019YFT-TR technical specifications, attributes, parameters and parts with similar specifications to Microchip MIC5019YFT-TR.

Type
Parameter

MOSFET Driver Type
High Side

Configuration
Non-Inverting

Maximum Supply Voltage (V)
9

Peak Source Output (A)
.00001

Peak Sink Output (A)
.00001

Source Resistance (Ω)
0

Sink Resistance (Ω)
0

Propagation Delay tD1 (ns)
0

Propagation Delay tD2 (ns)
0

Rise Time (tR, ns)
440,000

Fall Time (tF, ns)
5,560

Capacitive Load Drive
3,000 pF in 1.34 ms

Download datasheets and manufacturer documentation for Microchip MIC5019YFT-TR.

Data Sheets:

0446338ed4a4898dd791ee6c3d545fd9.pdf

The MIC5019 is a high-side MOSFET gate driver with integrated charge pump designed to switch an N-Channel enhancement type MOSFET control signal in high-side or low-side applications.

The MIC5019 operates from a 2.7 V to 9 V supply, and generates gate voltages of 9.2 V from a 3 V supply, and 16 V from a 9 V supply. The device consumes a low 77 µA of supply current and less than 1 µA of supply current in shutdown mode.

In high side configurations, the source voltage of the MOSFET approaches the supply voltage when switched on. To keep the MOSFET turned on, the MIC5019's output drives the MOSFET gate voltage higher than the supply voltage.

The MIC5019 is available in an ultra-small 4-pin 1.2 x 1.2 mm Thin QFN Package and is rated for -40°C to +125°C junction temperature range.

4-pin 1.2 x 1.2 mm Thin QFN Package

2.7 V to 9 V supply voltage range

16 V gate drive at V_DD = 9 V

8 V gate drive at V_DD = 2.7 V

Operates in low and high side configurations

150 µA (typical) supply current at V_DD = 5 V

< 1 µA shutdown supply current

-40°C to +125°C Junction Temperature Range

User Guide

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