Microchip MIC5019YFT-T5
Manufacturer No:
MIC5019YFT-T5
Manufacturer:
Package:
4-UQFN
Description:
Ultra-Small High Side MOSFET Gate Driver with Charge Pump
Quantity:
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MIC5019YFT-T5 Information
Microchip MIC5019YFT-T5 technical specifications, attributes, parameters and parts with similar specifications to Microchip MIC5019YFT-T5.
- Type
- Parameter
- MOSFET Driver Type
- High Side
- Configuration
- Non-Inverting
- Maximum Supply Voltage (V)
- 9
- Peak Source Output (A)
- .00001
- Peak Sink Output (A)
- .00001
- Source Resistance (Ω)
- 0
- Sink Resistance (Ω)
- 0
- Propagation Delay t<sub>D1</sub> (ns)
- 0
- Propagation Delay t<sub>D2</sub> (ns)
- 0
- Rise Time (t<sub>R</sub>, ns)
- 440,000
- Type
- Parameter
- Fall Time (t<sub>F</sub>, ns)
- 5,560
- Capacitive Load Drive
- 3,000 pF in 1.34 ms
Download datasheets and manufacturer documentation for Microchip MIC5019YFT-T5.
Data Sheets:
The MIC5019 is a high-side MOSFET gate driver with integrated charge pump designed to switch an N-Channel enhancement type MOSFET control signal in high-side or low-side applications.
The MIC5019 operates from a 2.7 V to 9 V supply, and generates gate voltages of 9.2 V from a 3 V supply, and 16 V from a 9 V supply. The device consumes a low 77 µA of supply current and less than 1 µA of supply current in shutdown mode.
In high side configurations, the source voltage of the MOSFET approaches the supply voltage when switched on. To keep the MOSFET turned on, the MIC5019's output drives the MOSFET gate voltage higher than the supply voltage.
The MIC5019 is available in an ultra-small 4-pin 1.2 x 1.2 mm Thin QFN Package and is rated for -40°C to +125°C junction temperature range.
MIC5019YFT-T5 Relevant information
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