Microchip MIC4422ZM-TR
Manufacturer No:
MIC4422ZM-TR
Manufacturer:
Microchip
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
9 A MOSFET Gate Driver
Quantity:
In Stock :9786
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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SHIPPING COST
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
MIC4422ZM-TR Information
Microchip MIC4422ZM-TR technical specifications, attributes, parameters and parts with similar specifications to Microchip MIC4422ZM-TR.
- Type
- Parameter
- MOSFET Driver Type
- Low Side
- Configuration
- Non-Inverting
- Maximum Supply Voltage (V)
- 18
- Peak Source Output (A)
- 9
- Peak Sink Output (A)
- 9
- Source Resistance (Ω)
- 0.8
- Sink Resistance (Ω)
- 0.6
- Propagation Delay t<sub>D1</sub> (ns)
- 15
- Propagation Delay t<sub>D2</sub> (ns)
- 35
- Rise Time (t<sub>R</sub>, ns)
- 20
- Type
- Parameter
- Fall Time (t<sub>F</sub>, ns)
- 24
- Capacitive Load Drive
- 10,000 pF in 24 ns
Download datasheets and manufacturer documentation for Microchip MIC4422ZM-TR.
Application Notes:
Data Sheets:
MIC4421 and MIC4422 MOSFET gate drivers are rugged, efficient, and easy to use. The MIC4421 is an inverting driver, while the MIC4422 is a non-inverting driver.
Both versions are capable of 9 A (peak) output and can drive the largest MOSFETs with an improved safe operating margin. The MIC4421/4422 accepts any logic input from 2.4 V to
VS without external speed-up capacitors or resistor networks. Proprietary circuits allow the input to swing negative by as much as 5 V without damaging the part. Additional circuits protect against damage from electrostatic discharge.
MIC4421/4422 gate drivers can replace three or more discrete components, reducing PCB area requirements, simplifying product design, and reducing assembly cost.
Modern Bipolar/CMOS/DMOS construction guarantees freedom from latch-up. The rail-to-rail swing capability of CMOS/DMOS insures adequate gate voltage to the MOSFET during power up/down sequencing. Since these devices are fabricated on a self-aligned process, they have very low crossover current, run cool, use little power, and are easy to drive.
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12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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