Microchip MCP14700T-E/MF

Manufacturer No:

MCP14700T-E/MF

Manufacturer:

Microchip

Package:

8-VDFN Exposed Pad

Description:

Synchronous MOSFET Driver w/separate High/Low side control

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In Stock :Available

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MCP14700T-E/MF information

Microchip MCP14700T-E/MF technical specifications, attributes, parameters and parts with similar specifications to Microchip MCP14700T-E/MF.

Type
Parameter

MOSFET Driver Type
Synchronous

Configuration
Dual Inputs

Maximum Supply Voltage (V)
5

Peak Source Output (A)
2

Peak Sink Output (A)
2

Source Resistance (Ω)
1

Sink Resistance (Ω)
1

Propagation Delay tD1 (ns)
15

Propagation Delay tD2 (ns)
22

Rise Time (tR, ns)
10

Fall Time (tF, ns)
10

Capacitive Load Drive
3300 pF in 10 ns

Download datasheets and manufacturer documentation for Microchip MCP14700T-E/MF.

Data Sheets:

77824615c7fb035758b66cb827dcefcd.pdf

The MCP14700 is a high-speed synchronous MOSFET gate driver designed to optimally drive a high-side and low-side N-Channel MOSFET.

The MCP14700 has two PWM inputs to allow independent control of the external N-Channel MOSFETs. Since there is no internal cross condition protection circuitry the external MOSFET dead time can be tightly controlled allowing for more efficient systems or unique motor control algorithms.

The transition thresholds for the PWM inputs are typically 1.6 V on a rising PWM input signal and typically 1.0 V on a falling PWM input signal. This make the MCP14700 ideal suited for controllers that utilize 3.0V TTL/CMOS logic. The PWM inputs are internally pulled low.

The HIGHDR and LOWDR source current capability of the MCP14700 device is typically 2 A peak. While the HIGHDR can sink 2 A peak typically, the LOWDR can sink 3.5 A typically. The low resistance pull-up and pulldown drive allow the MCP14700 to quickly transition a 3300 pF load in typically 10ns. Bootstrapping for the high-side drive is internally implemented which allows for a reduced system cost and design complexity.

The MCP14700 is available in a surface mount 8 Lead SOIC package with a body width of 150 mils and the 8 Lead 3 x 3 mm DFN package.

Independent PWM input Control for High-Side and Low-Side Gate Drive

inputs are dsPIC compatible

3300 pF in 10.0 ns (typ)

Low Supply Current: 80 µA (typ)

Internal Bootstrap Blocking Device

Supports Floating High-Side Drive

8 Lead surface mount SOIC, 150 mil body

8 Lead 3mmX3mm D

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