STMicroelectronics MASTERGAN1LTR
Manufacturer No:
MASTERGAN1LTR
Manufacturer:
STMicroelectronics
Package:
Description:
Gate Drivers 600 V half-bridge enhancement mode GaN HEMT with high voltage driver
Quantity:
In Stock :4326
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Shipped from：HK Warehouse
Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
MASTERGAN1LTR Information
STMicroelectronics MASTERGAN1LTR technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics MASTERGAN1LTR.
- Type
- Parameter
- Operating Temp Min Celsius
- -40.0
- Operating Temp Max Celsius
- 125.0
- ECCN US
- EAR99
- ECCN EU
- NEC
- Packing Type
- Tape And Reel
- RoHS Status
- Grade
- Industrial
- Package Name
- VFQFPN 9X9X1.0 31L PITCH 0.6MM
- Operating Temp Min Celsius
- -40.0
- Operating Temp Max Celsius
- 125.0
- Type
- Parameter
- ECCN US
- EAR99
- ECCN EU
- NEC
- Packing Type
- Tape And Reel
- RoHS Status
- Grade
- Industrial
- Package Name
- VFQFPN 9X9X1.0 31L PITCH 0.6MM
Download datasheets and manufacturer documentation for STMicroelectronics MASTERGAN1LTR.
Data sheet:
The MASTERGAN1L is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.
The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
The MASTERGAN1L features UVLO protection on VCC, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.
The input pins extended range allows easy interfacing with analog controllers, microcontrollers and DSP units.
The MASTERGAN1L operates in the industrial temperature range, -40°C to 125°C.
The device is available in a compact 9x9 mm QFN package.
- 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors:
- QFN 9 x 9
x 1 mm package - RDS(ON)
= 150 mΩ - IDS(MAX)
= 10 A
- QFN 9 x 9
- Reverse current capability
- Zero reverse recovery loss
- UVLO protection on VCC
- Internal bootstrap diode
- Interlocking function
- Dedicated pin for shutdown functionality
- Accurate internal timing match
- 3.3 V to 15 V compatible inputs with hysteresis and pull-down
- Overtemperature protection
- Bill of material reduction
- Very compact and simplified layout
- Flexible, easy and fast design.
- Ultra short wake up time, less than 200 ns
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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