

ONSEMI KSD1616GBU
Manufacturer No:
KSD1616GBU
Manufacturer:
Package:
TO-226-3, TO-92-3 (TO-226AA)
Description:
NPN 150°C TJ 100nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
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KSD1616GBU information
ONSEMI KSD1616GBU technical specifications, attributes, parameters and parts with similar specifications to ONSEMI KSD1616GBU.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Number of Pins
- 3
- Weight
- 179mg
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Voltage - Rated DC
- 50V
- Max Power Dissipation
- 750mW
- Current Rating
- 1A
- Frequency
- 160MHz
- Base Part Number
- KSD1616
- Number of Elements
- 1
- Element Configuration
- Single
- Power Dissipation
- 750mW
- Gain Bandwidth Product
- 160MHz
- Transistor Type
- NPN
- Collector Emitter Voltage (VCEO)
- 50V
- Max Collector Current
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 100mA 2V
- Current - Collector Cutoff (Max)
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 50mA, 1A
- Collector Emitter Saturation Voltage
- 150mV
- Collector Base Voltage (VCBO)
- 60V
- Emitter Base Voltage (VEBO)
- 6V
- hFE Min
- 135
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for ONSEMI KSD1616GBU.
Datasheets:
ReachStatement:
KSD1616GBU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 150mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 50mA, 1A.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
KSD1616GBU Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1A
KSD1616GBU Applications
There are a lot of ON Semiconductor
KSD1616GBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
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