ONSEMI KSC1008COBU
ONSEMI KSC1008COBU

ONSEMI KSC1008COBU

Manufacturer No:

KSC1008COBU

Manufacturer:

ONSEMI

Package:

TO-226-3, TO-92-3 (TO-226AA)

Description:

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

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Step1:Prepare product

Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step3:Vacuum Packaging

Step4:Individual Package

Step4:Individual Package

Step5:Anti-collision Filling

Step5:Anti-collision Filling

Step6:Packaging Box

Step6:Packaging Box

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3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

KSC1008COBU Information

ONSEMI KSC1008COBU technical specifications, attributes, parameters and parts with similar specifications to ONSEMI KSC1008COBU.

  • Type
  • Parameter
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-226-3, TO-92-3 (TO-226AA)
  • Number of Pins
  • 3
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • 150°C TJ
  • Packaging
  • Bulk
  • JESD-609 Code
  • e3
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Type
  • Parameter
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • Terminal Finish
  • MATTE TIN
  • Voltage - Rated DC
  • 60V
  • Max Power Dissipation
  • 800mW
  • Terminal Position
  • BOTTOM
  • Current Rating
  • 700mA
  • Frequency
  • 50MHz
  • Base Part Number
  • KSC1008
  • Number of Elements
  • 1

Download datasheets and manufacturer documentation for ONSEMI KSC1008COBU.

KSC1008COBU Overview


This device has a DC current gain of 70 @ 50mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 400mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.This device has a current rating of 700mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A maximum collector current of 700mA volts is possible.

KSC1008COBU Features


the DC current gain for this device is 70 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz


KSC1008COBU Applications


There are a lot of ON Semiconductor
KSC1008COBU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

In Stock :Available

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Shipped from:HK Warehouse
Expected Shipping:Mon, Mar 16 - Tue, Mar 17, 2026
Date Code:Within 2 Years

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