ONSEMI KSB1151YSTSSTU

Manufacturer No:

KSB1151YSTSSTU

Manufacturer:

ONSEMI

Package:

TO-225AA, TO-126-3

Description:

PNP 150°C TJ 10?A ICBO 1 Elements TO-225AA, TO-126-3 Tube Through Hole

Quantity:

Delivery:

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In Stock :Available

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KSB1151YSTSSTU information

ONSEMI KSB1151YSTSSTU technical specifications, attributes, parameters and parts with similar specifications to ONSEMI KSB1151YSTSSTU.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-225AA, TO-126-3

Number of Pins
3

Weight
758mg

Operating Temperature
150°C TJ

Packaging
Tube

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Voltage - Rated DC
-60V

Max Power Dissipation
1.3W

Current Rating
-5A

Base Part Number
KSB1151

Number of Elements
1

Element Configuration
Single

Power Dissipation
1.3W

Transistor Type
PNP

Collector Emitter Voltage (VCEO)
60V

Max Collector Current
5A

DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 2A 1V

Current - Collector Cutoff (Max)
10?A ICBO

Vce Saturation (Max) @ Ib, Ic
300mV @ 200mA, 2A

Collector Emitter Breakdown Voltage
60V

Collector Emitter Saturation Voltage
-140mV

Emitter Base Voltage (VEBO)
-7V

hFE Min
100

Radiation Hardening
No

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for ONSEMI KSB1151YSTSSTU.

Datasheets:

onsemiconductor-ksb1151ys-datasheets-8224.pdf

KSB1151YSTSSTU Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 2A 1V.The collector emitter saturation voltage is -140mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -5A.A maximum collector current of 5A volts can be achieved.

KSB1151YSTSSTU Features

the DC current gain for this device is 160 @ 2A 1V
a collector emitter saturation voltage of -140mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -7V
the current rating of this device is -5A

KSB1151YSTSSTU Applications

There are a lot of ON Semiconductor
KSB1151YSTSSTU applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

PURCHASE

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IMPORTANT NOTICE

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SHIPPING COST

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.