ONSEMI KSA1156YSTSTU
Manufacturer No:
KSA1156YSTSTU
Manufacturer:
ONSEMI
Package:
TO-225AA, TO-126-3
Description:
PNP 150°C TJ 100?A ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
Quantity:
In Stock :4545
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
KSA1156YSTSTU Information
ONSEMI KSA1156YSTSTU technical specifications, attributes, parameters and parts with similar specifications to ONSEMI KSA1156YSTSTU.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-225AA, TO-126-3
- Number of Pins
- 3
- Weight
- 758mg
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tube
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Type
- Parameter
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Voltage - Rated DC
- -400V
- Max Power Dissipation
- 1W
- Current Rating
- -500mA
- Base Part Number
- KSA1156
- Number of Elements
- 1
Download datasheets and manufacturer documentation for ONSEMI KSA1156YSTSTU.
Datasheets:
PCN Obsolescence/ EOL:
PCN Design/Specification:
KSA1156YSTSTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 10mA, 100mA.The emitter base voltage can be kept at -7V for high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
KSA1156YSTSTU Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 10mA, 100mA
the emitter base voltage is kept at -7V
the current rating of this device is -500mA
KSA1156YSTSTU Applications
There are a lot of ON Semiconductor
KSA1156YSTSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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