Renesas IS9-2100AEH-Q
Manufacturer No:
IS9-2100AEH-Q
Manufacturer:
Renesas
Package:
Description:
Radiation Hardened High Frequency Half Bridge Drivers
Quantity:
In Stock :7643
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IS9-2100AEH-Q Information
Renesas IS9-2100AEH-Q technical specifications, attributes, parameters and parts with similar specifications to Renesas IS9-2100AEH-Q.
- Type
- Parameter
- Pkg. Type
- CFP
- Lead Count (#)
- 16
- Carrier Type
- Tray
- Moisture Sensitivity Level (MSL)
- Not Applicable
- DLA SMD
- 5962F9953603VXC
- Pb (Lead) Free
- Exempt
- Pb Free Category
- Gold Plate over compliant Undercoat-e4
- MOQ
- 25
- Temp. Range
- -55 to +125°C
- CAGE code
- 34371
- Type
- Parameter
- Bus Voltage (Max) (V)
- 130
- DSEE (MeV·cm2/mg)
- 90
- Driver Type
- Half Bridge
- Drivers (#)
- 1
- FET Type
- MOSFET
- Fall Time
- 60
- Flow
- RH Hermetic
- High Side Fall Time (max) (ns)
- 40
- High Side Rise Time (max) (ns)
- 40
- Input VCC (Max) (V)
- 20
Download datasheets and manufacturer documentation for Renesas IS9-2100AEH-Q.
The radiation hardened IS-2100ARH, IS-2100AEH are high-frequency, 130V half-bridge N-Channel MOSFET driver ICs, which are functionally similar to industry-standard 2110 types. The low-side and high-side gate drivers are independently controlled. This gives the user maximum flexibility in dead time selection and driver protocol. In addition, the devices have on-chip error detection and correction circuitry, which monitors the state of the high-side latch and compares it to the HIN signal. If they disagree, a set or reset pulse is generated to correct the high-side latch. This feature protects the high-side latch from single event upsets (SEUs).
- Electrically screened to DLA SMD # 5962-99536
- QML qualified per MIL-PRF-38535 requirements
- Radiation environment
- Maximum total dose: 300krad(Si)
- DI RSG process provides latch-up immunity
- SEU rating: 82MeV/mg/cm2
- Vertical device architecture reduces sensitivity to low dose rates
- Bootstrap supply maximum voltage to 150V
- Drives 1000pF load at 1MHz with rise and fall times of 30ns (typical)
- 1.5A (typical) peak output current
- Independent inputs for non-half bridge topologies
- Low DC power consumption: 60mW (typical)
- Operates with VDD = VCC over 12V to 20V range
- Low-side supply undervoltage protection
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