INFINEON IRLR3915PBF

Manufacturer No:

IRLR3915PBF

Manufacturer:

INFINEON

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) N-Channel Tube 14m ? @ 30A, 10V ±16V 1870pF @ 25V 92nC @ 10V 55V TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity:

In Stock :8608

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRLR3915PBF Information

INFINEON IRLR3915PBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRLR3915PBF.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Surface Mount
YES

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tube

Series
HEXFET®

Published
2002

JESD-609 Code
e3

Part Status
Discontinued

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

ECCN Code
EAR99

Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

HTS Code
8541.29.00.95

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Download datasheets and manufacturer documentation for INFINEON IRLR3915PBF.

IRLR3915PBF Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.A device's maximum input capacitance is 1870pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 30A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 240A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 55V.To operate this transistor, you need to apply a 55V drain to source voltage (Vdss).This device uses no drive voltage (5V 10V) to reduce its overall power consumption.