INFINEON IRLL2703TRPBF

Manufacturer No:

IRLL2703TRPBF

Manufacturer:

INFINEON

Package:

TO-261-4, TO-261AA

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 45m ? @ 3.9A, 10V ±16V 530pF @ 25V 14nC @ 5V TO-261-4, TO-261AA

Quantity:

In Stock :9266

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Expected Shipping：Sun, May 17 - Mon, May 18, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IRLL2703TRPBF Information

INFINEON IRLL2703TRPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRLL2703TRPBF.

Type
Parameter

Factory Lead Time
14 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-261-4, TO-261AA

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Series
HEXFET®

Published
1999

Type
Parameter

JESD-609 Code
e3

Part Status
Not For New Designs

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
4

ECCN Code
EAR99

Resistance
60mOhm

Terminal Finish
Matte Tin (Sn)

Additional Feature
HIGH RELIABILITY, AVALANCHE RATED

Voltage - Rated DC
30V

Technology
MOSFET (Metal Oxide)

Download datasheets and manufacturer documentation for INFINEON IRLL2703TRPBF.

IRLL2703TRPBF Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 180 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 530pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 3.9A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 6.9 ns.Peak drain current is 16A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7.4 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 16V to 1.Using drive voltage (4V 10V), this device contributes to a reduction in overall power consumption.

IRLL2703TRPBF Features

the avalanche energy rating (Eas) is 180 mJ
a continuous drain current (ID) of 3.9A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 6.9 ns
based on its rated peak drain current 16A.