INFINEON IRG4BC10KDPBF
Manufacturer No:
IRG4BC10KDPBF
Manufacturer:
INFINEON
Package:
TO-220-3
Description:
Quantity:
In Stock :5712
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Shipped from：HK Warehouse
Expected Shipping：Fri, Jun 12 - Sat, Jun 13, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRG4BC10KDPBF Information
INFINEON IRG4BC10KDPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRG4BC10KDPBF.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Published
- 2000
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Termination
- Through Hole
- ECCN Code
- EAR99
- Additional Feature
- LOW CONDUCTION LOSS
- Subcategory
- Insulated Gate BIP Transistors
- Voltage - Rated DC
- 600V
- Max Power Dissipation
- 38W
- Current Rating
- 9A
- Number of Elements
- 1
Download datasheets and manufacturer documentation for INFINEON IRG4BC10KDPBF.
Other Related Documents:
PCN Assembly/Origin:
PCN Packaging:
ConflictMineralStatement:
IRG4BC10KDPBF Description
IRG4BC10KDPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for motor control. As a Generation 4 IGBT, it is able to offer the highest power density motor controls possible, tighter parameter distribution, and higher efficiency. This IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. Its HEXFRED diodes are optimized for performance with IGBTs.
IRG4BC10KDPBF Features
Industry-standard TO-220AB packages
Extremely tight Vce(on) distribution
Tighter parameter distribution
Highest efficiencies available
Higher efficiency
IRG4BC10KDPBF Applications
Industrial motor drive
Solar inverters
Welding
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
