INFINEON IRFS23N20DPBF
Manufacturer No:
IRFS23N20DPBF
Manufacturer:
INFINEON
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tube 100m ? @ 14A, 10V ±30V 1960pF @ 25V 86nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :3597
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Shipped from：HK Warehouse
Expected Shipping：Fri, Jun 5 - Sat, Jun 6, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRFS23N20DPBF Information
INFINEON IRFS23N20DPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFS23N20DPBF.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2000
- JESD-609 Code
- e3
- Part Status
- Discontinued
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- 30
Download datasheets and manufacturer documentation for INFINEON IRFS23N20DPBF.
Other Related Documents:
PCN Design/Specification:
PCN Assembly/Origin:
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PCN Part Status Change:
IRFS23N20DPBF Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 250 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1960pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 24A.Peak drain current is 96A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 200V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFS23N20DPBF Features
the avalanche energy rating (Eas) is 250 mJ
based on its rated peak drain current 96A.
a 200V drain to source voltage (Vdss)
IRFS23N20DPBF Applications
There are a lot of Infineon Technologies
IRFS23N20DPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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12.28 M
Listed Part Number
3,000+
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In-stock SKU
15,000+
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