VISHAY IRFR1N60ATRPBF
VISHAY IRFR1N60ATRPBF

VISHAY IRFR1N60ATRPBF

Manufacturer No:

IRFR1N60ATRPBF

Manufacturer:

VISHAY

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 7Ohm @ 840mA, 10V ±30V 229pF @ 25V 14nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63

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In Stock :6577

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Shipped from:HK Warehouse
Expected Shipping:Thu, May 14 - Fri, May 15, 2026
Date Code:Within 2 Years

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Step1:Prepare product

Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step3:Vacuum Packaging

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Step4:Individual Package

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Step5:Anti-collision Filling

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Step6:Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRFR1N60ATRPBF Information

VISHAY IRFR1N60ATRPBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFR1N60ATRPBF.

  • Type
  • Parameter
  • Factory Lead Time
  • 8 Weeks
  • Contact Plating
  • Tin
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Number of Pins
  • 3
  • Supplier Device Package
  • D-Pak
  • Weight
  • 1.437803g
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Type
  • Parameter
  • Published
  • 2013
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Resistance
  • 7Ohm
  • Max Operating Temperature
  • 150°C
  • Min Operating Temperature
  • -55°C
  • Technology
  • MOSFET (Metal Oxide)
  • Number of Elements
  • 1
  • Number of Channels
  • 1
  • Power Dissipation-Max
  • 36W Tc

Download datasheets and manufacturer documentation for VISHAY IRFR1N60ATRPBF.

IRFR1N60ATRPBF Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 229pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 18 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 7Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9.8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFR1N60ATRPBF Features


a continuous drain current (ID) of 1.4A
the turn-off delay time is 18 ns
single MOSFETs transistor is 7Ohm
a 600V drain to source voltage (Vdss)


IRFR1N60ATRPBF Applications


There are a lot of Vishay Siliconix
IRFR1N60ATRPBF applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.