VISHAY IRFPS40N50L
VISHAY IRFPS40N50L

VISHAY IRFPS40N50L

Manufacturer No:

IRFPS40N50L

Manufacturer:

VISHAY

Package:

TO-274AA

Description:

MOSFET (Metal Oxide) N-Channel Tube 100mOhm @ 28A, 10V ±30V 8110pF @ 25V 380nC @ 10V 500V TO-274AA

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Step1:Prepare product

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Step2:Desiccant Protection

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Step3:Vacuum Packaging

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Step4:Individual Package

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Step5:Anti-collision Filling

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IRFPS40N50L Information

VISHAY IRFPS40N50L technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFPS40N50L.

  • Type
  • Parameter
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-274AA
  • Number of Pins
  • 3
  • Supplier Device Package
  • SUPER-247? (TO-274AA)
  • Weight
  • 38.000013g
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tube
  • Published
  • 2017
  • Part Status
  • Obsolete
  • Type
  • Parameter
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Max Operating Temperature
  • 150°C
  • Min Operating Temperature
  • -55°C
  • Technology
  • MOSFET (Metal Oxide)
  • Number of Channels
  • 1
  • Power Dissipation-Max
  • 540W Tc
  • Element Configuration
  • Single
  • Turn On Delay Time
  • 27 ns
  • FET Type
  • N-Channel
  • Rds On (Max) @ Id, Vgs
  • 100mOhm @ 28A, 10V

Download datasheets and manufacturer documentation for VISHAY IRFPS40N50L.

IRFPS40N50L Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8110pF @ 25V.This device has a continuous drain current (ID) of [46A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 50 ns.MOSFETs have 100mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 27 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRFPS40N50L Features


a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 50 ns
single MOSFETs transistor is 100mOhm
a 500V drain to source voltage (Vdss)


IRFPS40N50L Applications


There are a lot of Vishay Siliconix
IRFPS40N50L applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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