

INFINEON IRFL014NPBF
Manufacturer No:
IRFL014NPBF
Manufacturer:
Package:
TO-261-4, TO-261AA
Description:
MOSFET (Metal Oxide) N-Channel Tube 160m ? @ 1.9A, 10V ±20V 190pF @ 25V 11nC @ 10V 55V TO-261-4, TO-261AA
Quantity:


In Stock :5201
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRFL014NPBF Information
INFINEON IRFL014NPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFL014NPBF.
- Type
- Parameter
- Factory Lead Time
- 18 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2004
- Part Status
- Discontinued
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Type
- Parameter
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 1W Ta
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 160m ? @ 1.9A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 190pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 1.9A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 11nC @ 10V
- Drain to Source Voltage (Vdss)
- 55V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
Download datasheets and manufacturer documentation for INFINEON IRFL014NPBF.
Other Related Documents:
IRFL014NPBF Description
International Rectifier's Fifth Generation HEXFET? MOSFETs use cutting-edge processing methods to produce extraordinarily low on-resistance per silicon area. This feature gives the designer a highly effective and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET? power MOSFETs are renowned for.
The SOT-223 package is made to be surface-mounted utilizing infrared, vapor phase, or wave soldering processes.
In addition to having the same simple automatic pick-and-place functionality as regular SOT or SOIC packages, this package's special design offers increased thermal performance thanks to a larger tab for heatsinking. One Watt of power can be lost in a typical surface mount application.
IRFL014NPBF Features
Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Lead-Free
IRFL014NPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRFL014NPBF Relevant information
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