IRFIBC30G-VISHAY-Price, Stock & Datasheet

IRFIBC30G Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 660pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2.5A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [35 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 2.2Ohm.A turn-on delay time of 11 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRFIBC30G Features

a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 2.2Ohm
a 600V drain to source voltage (Vdss)