VISHAY IRFI640GPBF
Manufacturer No:
IRFI640GPBF
Manufacturer:
VISHAY
Package:
TO-220-3 Full Pack, Isolated Tab
Description:
MOSFET (Metal Oxide) N-Channel Tube 180mOhm @ 5.9A, 10V ±20V 1300pF @ 25V 70nC @ 10V 200V TO-220-3 Full Pack, Isolated Tab
Quantity:
In Stock :7418
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Shipped from：HK Warehouse
Expected Shipping：Sat, Jun 13 - Sun, Jun 14, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRFI640GPBF Information
VISHAY IRFI640GPBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFI640GPBF.
- Type
- Parameter
- Factory Lead Time
- 8 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Number of Pins
- 3
- Supplier Device Package
- TO-220-3
- Weight
- 6.000006g
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Published
- 2009
- Type
- Parameter
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Resistance
- 180mOhm
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Technology
- MOSFET (Metal Oxide)
- Number of Elements
- 1
- Number of Channels
- 1
- Power Dissipation-Max
- 40W Tc
- Element Configuration
- Single
Download datasheets and manufacturer documentation for VISHAY IRFI640GPBF.
Datasheets:
RohsStatement:
IRFI640GPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 180mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFI640GPBF Features
a continuous drain current (ID) of 9.8A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 45 ns
single MOSFETs transistor is 180mOhm
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)
IRFI640GPBF Applications
There are a lot of Vishay Siliconix
IRFI640GPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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