INFINEON IPP80R1K4P7XKSA1
Manufacturer No:
IPP80R1K4P7XKSA1
Manufacturer:
INFINEON
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 1.4 ? @ 1.4A, 10V ±20V 250pF @ 500V 10nC @ 10V 800V TO-220-3
Quantity:
In Stock :9884
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IPP80R1K4P7XKSA1 Information
INFINEON IPP80R1K4P7XKSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPP80R1K4P7XKSA1.
- Type
- Parameter
- Factory Lead Time
- 18 Weeks
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- CoolMOS?
- Published
- 2016
- JESD-609 Code
- e3
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- Not Applicable
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
Download datasheets and manufacturer documentation for INFINEON IPP80R1K4P7XKSA1.
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ConflictMineralStatement:
IPP80R1K4P7XKSA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 8 mJ.A device's maximal input capacitance is 250pF @ 500V, which is defined as the capacitance between its input terminals with either input grounded.In terms of pulsed drain current, it has a maximum of 8.9A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 800V.This transistor requires a 800V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IPP80R1K4P7XKSA1 Features
the avalanche energy rating (Eas) is 8 mJ
based on its rated peak drain current 8.9A.
a 800V drain to source voltage (Vdss)
IPP80R1K4P7XKSA1 Applications
There are a lot of Infineon Technologies
IPP80R1K4P7XKSA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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12.28 M
Listed Part Number
3,000+
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In-stock SKU
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