INFINEON IPW60R250CP

Manufacturer No:

IPW60R250CP

Manufacturer:

INFINEON

Package:

TO-247-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 250m ? @ 7.8A, 10V ±20V 1200pF @ 100V 35nC @ 10V 650V TO-247-3

Quantity:

In Stock :9154

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Shipped from：HK Warehouse

Expected Shipping：Sun, May 10 - Mon, May 11, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IPW60R250CP Information

INFINEON IPW60R250CP technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPW60R250CP.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-247-3

Surface Mount
NO

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Series
CoolMOS?

Published
2011

JESD-609 Code
e3

Type
Parameter

Pbfree Code
yes

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
TIN

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Download datasheets and manufacturer documentation for INFINEON IPW60R250CP.

Datasheets:

infineontechnologies-ipw60r250cp-datasheets-8092.pdf

infineontechnologies-ipw60r250cp-datasheets-8093.pdf

infineon-ipw60r250cp-datasheets-3194.pdf

infineon-ipw60r250cp-datasheets-3195.pdf

ConflictMineralStatement:

infineon-b43821a4225m000-conflictmineralstatement-7662.pdf

IPW60R250CP Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1200pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.As far as peak drain current is concerned, its maximum pulsed current is 40A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 650V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IPW60R250CP Features

a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 600V voltage
based on its rated peak drain current 40A.
a 650V drain to source voltage (Vdss)