

INFINEON IPD50N06S2L13ATMA1
Manufacturer No:
IPD50N06S2L13ATMA1
Manufacturer:
INFINEON
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
N-Channel Tape & Reel (TR) 12.7m Ω @ 34A, 10V ±20V 1800pF @ 25V 69nC @ 10V 55V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:


In Stock :9556
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Step6:Packaging Box
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IPD50N06S2L13ATMA1 Information
INFINEON IPD50N06S2L13ATMA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPD50N06S2L13ATMA1.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Current - Continuous Drain (Id) @ 25℃
- 50A Tc
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V 10V
- Number of Elements
- 1
- Power Dissipation (Max)
- 136W Tc
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Type
- Parameter
- Series
- OptiMOS™
- Published
- 2006
- Part Status
- Discontinued
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Additional Feature
- ULTRA-LOW RESISTANCE
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Reference Standard
- AEC-Q101
Download datasheets and manufacturer documentation for INFINEON IPD50N06S2L13ATMA1.
Other Related Documents:
PCN Assembly/Origin:
IPD50N06S2L13ATMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 240 mJ.The maximum input capacitance of this device is 1800pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 50A.There is no pulsed drain current maximum for this device based on its rated peak drain current 200A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 55V.The drain-to-source voltage (Vdss) of this transistor needs to be at 55V in order to operate.
IPD50N06S2L13ATMA1 Features
the avalanche energy rating (Eas) is 240 mJ
based on its rated peak drain current 200A.
a 55V drain to source voltage (Vdss)
IPD50N06S2L13ATMA1 Applications
There are a lot of Infineon Technologies
IPD50N06S2L13ATMA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IPD50N06S2L13ATMA1 Relevant information
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