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INFINEON IPD30N06S4L23ATMA2 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPD30N06S4L23ATMA2.
Download datasheets and manufacturer documentation for INFINEON IPD30N06S4L23ATMA2.
Product Description
The IPD30N06S4L23ATMA2 is a high-performance N-Channel MOSFET from Infineon Technologies, designed for switching applications in automotive and industrial markets. This discrete semiconductor product is part of the OptiMOS? series, which is known for its high efficiency, low power consumption, and reliability.
Features
Applications
Alternative Parts
Embedded Modules
Frequently Asked Questions
Q: What is the maximum power dissipation of this MOSFET? A: The maximum power dissipation is 36W at a maximum temperature of 175°C.
Q: What is the peak pulsed drain current of this MOSFET? A: The peak pulsed drain current is 120A.
Q: What is the Rds(on) of this MOSFET at 30A and 10V? A: The Rds(on) is 23mΩ at 30A and 10V.
Q: Is this MOSFET compliant with ROHS3 and AEC-Q101 standards? A: Yes, this MOSFET is compliant with ROHS3 and AEC-Q101 standards.
Q: What is the operating temperature range of this MOSFET? A: The operating temperature range is -55°C to 175°C TJ.
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