INFINEON IRG4PC50UD-EPBF
Manufacturer No:
IRG4PC50UD-EPBF
Manufacturer:
INFINEON
Package:
TO-247-3
Description:
Quantity:
In Stock :7780
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Shipped from：HK Warehouse
Expected Shipping：Mon, Jun 15 - Tue, Jun 16, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRG4PC50UD-EPBF Information
INFINEON IRG4PC50UD-EPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRG4PC50UD-EPBF.
- Type
- Parameter
- Factory Lead Time
- 14 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Number of Pins
- 3
- Weight
- 38.000013g
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Bulk
- Published
- 2001
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Termination
- Through Hole
- Voltage - Rated DC
- 600V
- Max Power Dissipation
- 200W
- Current Rating
- 55A
- Element Configuration
- Single
- Power Dissipation
- 200W
- Input Type
- Standard
- Rise Time
- 25ns
- Collector Emitter Voltage (VCEO)
- 2V
Download datasheets and manufacturer documentation for INFINEON IRG4PC50UD-EPBF.
Other Related Documents:
PCN Packaging:
ConflictMineralStatement:
IRG4PC50UD-EPBF Description
IRG4PC50UD-EPBF is a 600v insulated gate bipolar transistor with an ultrafast soft recovery diode. Generation 4 IGBTs offer the highest efficiencies available. IGBT's optimized for specific application conditions. HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing. IRG4PC50UD-EPBF is designed as a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs.
IRG4PC50UD-EPBF Features
Voltage - Collector Emitter Breakdown (Max): 600 V
UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
Generation 3
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Vce(on) (Max) @ Vge, Ic: 2 V
Power - Max:200 W
Switching Energy: 0.99 mJ (on), 0.59 mJ (off)
Input Type: Standard
Gate Charge: 90nC
Td (on/off) @ 25°C: 46 ns/140 ns
Operating Temperature: -55°C to 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC (TO-247-3)
IRG4PC50UD-EPBF Applications
Automotive
Hybrid, electric & powertrain systems
Communications equipment
Datacom module
Enterprise systems
Enterprise projectors
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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