Renesas HS0-303BRH/SAMPLE
Manufacturer No:
HS0-303BRH/SAMPLE
Manufacturer:
Renesas
Package:
Description:
Radiation Hardened CMOS Dual SPDT Analog Switch
Quantity:
In Stock :6873
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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HS0-303BRH/SAMPLE Information
Renesas HS0-303BRH/SAMPLE technical specifications, attributes, parameters and parts with similar specifications to Renesas HS0-303BRH/SAMPLE.
- Type
- Parameter
- Pkg. Type
- DIE
- Pb (Lead) Free
- No
- MOQ
- 5
- Temp. Range
- -40 to +125°C
- CAGE code
- 34371
- Flow
- RH Hermetic
- Leakage Current (max, post-rad) (±nA)
- 100
- Qualification Level
- EM
- RON (max) (ohms)
- 70
- Rating
- Space
- Type
- Parameter
- Supply Current (max, post-rad)
- +150µA/-100µA
- Supply Voltage (max) (V)
- 12 - 12
- Supply Voltage (min) (V)
- -12 - -12
- Supply Voltage of Specification Limits (±V)
- 12
- Switches (#)
- 2
- TID HDR (krad(Si))
- 300
- TID LDR (krad(Si))
- 50
- Turn-Off Time (max) (ns)
- 450
- Turn-On Time (max) (ns)
- 500
- rON (max, post-rad) (Ω)
- 70
Download datasheets and manufacturer documentation for Renesas HS0-303BRH/SAMPLE.
The HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH analog switches are monolithic devices fabricated using the Renesas dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to ensure latch-up free operation. They are pinout compatible and functionally equivalent to the HS-303RH, but offer improved 300kRAD(Si) total dose capability. These switches offer low-resistance switching performance for analog voltages up to the supply rails. ON-resistance is low and stays reasonably constant over the full range of operating voltage and current. ON-resistance also stays reasonably constant when exposed to radiation. Break-before-make switching is controlled by 5V digital inputs. The HS-303ARH and HS-303AEH should be operated with nominal ±15V supplies, while the HS-303BRH and HS-303BEH should be operated with nominal ±12V supplies.
- Electrically screened to DLA SMD# 5962-95813
- QML, per MIL-PRF-38535
- Radiation performance
- Total dose: 3x105rad(Si)
- SEE: For LET = 60MeV•cm2/mg at 60° incident angle, <150pC charge transferred to the output of an off switch (based on SOI design calculations)
- No latch-up, dielectrically isolated device islands
- Pinout and functionally compatible with Renesas HS-303RH and HI-303 series analog switches
- Analog signal range equal to the supply voltage range
- Low leakage: 100nA (max, post-rad)
- Low rON: 70Ω (max, post-rad)
- Low standby supply current: +150μA/-100μA (max, post-rad)
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12.28 M
Listed Part Number
3,000+
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4.9 M
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15,000+
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