ONSEMI HGTG20N60B3D

Manufacturer No:

HGTG20N60B3D

Manufacturer:

ONSEMI

Package:

TO-247-3

Description:

600V, PT IGBT

Quantity:

In Stock :Available

Looking for price or availability? Send us an RFQ and our sales team will respond quickly.

Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Mon, Apr 27 - Tue, Apr 28, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

Payment

We support multiple secure payment methods including PayPal, Visa, MasterCard, and American Express. All transactions are protected with advanced encryption to ensure secure and reliable payments.

Authenticity Guarantee

All components supplied by Aichiplink are sourced from trusted global suppliers and verified through strict in-house inspection and quality control procedures.

Quality Assurance

Certified in-house inspection and testing facilities ensure all components meet internationally recognized quality standards.

User Guide

Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.

PURCHASE

Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.

MEANS OF PAYMENT

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer. Net terms may be available for qualified customers upon approval.

RFQ (REQUEST FOR QUOTATIONS)

Please ensure the part numbers and quantities are accurate and complete when submitting your RFQ.
Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

HGTG20N60B3D Information

ONSEMI HGTG20N60B3D technical specifications, attributes, parameters and parts with similar specifications to ONSEMI HGTG20N60B3D.

Type
Parameter

MSL Temp (°C)
0

IC Max (A)
20

Gate Charge Typ (nC)
-

EAS Typ (mJ)
-

V(BR)CES Typ (V)
600

Eon Typ (mJ)
-

Trr Typ (ns)
-

Irr Typ (A)
-

Case Outline
340CK

Container Type
TUBE

Type
Parameter

Eoff Typ (mJ)
-

Short Circuit Withstand (µs)
-

Co-Packaged Diode
Yes

Package Type
TO-247-3

MSL Type
NA

Container Qty.
450

Family
-

VCE(sat) Typ (V)
1.8

VF Typ (V)
-

PD Max (W)
-

Download datasheets and manufacturer documentation for ONSEMI HGTG20N60B3D.

Package Drawing:

d9bfb84b240ee385ab61b5dd070dac5b.pdf

Datasheet:

ad62369f303b4e52f50502b339501a34.pdf

The HGTG20N60B3D is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.