DIODES FZT958TA
DIODES FZT958TA

DIODES FZT958TA

Manufacturer No:

FZT958TA

Manufacturer:

DIODES

Package:

TO-261-4, TO-261AA

Description:

PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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FZT958TA information

DIODES FZT958TA technical specifications, attributes, parameters and parts with similar specifications to DIODES FZT958TA.

  • Type
  • Parameter
  • Factory Lead Time
  • 12 Weeks
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-261-4, TO-261AA
  • Number of Pins
  • 4
  • Weight
  • 7.994566mg
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Published
  • 2006
  • JESD-609 Code
  • e3
  • Pbfree Code
  • no
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 4
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Matte Tin (Sn)
  • Subcategory
  • Other Transistors
  • Voltage - Rated DC
  • -400V
  • Max Power Dissipation
  • 3W
  • Terminal Position
  • DUAL
  • Terminal Form
  • GULL WING
  • Peak Reflow Temperature (Cel)
  • 260
  • Current Rating
  • -500mA
  • Time@Peak Reflow Temperature-Max (s)
  • 40
  • Base Part Number
  • FZT958
  • Number of Elements
  • 1
  • Element Configuration
  • Single
  • Power Dissipation
  • 3W
  • Case Connection
  • COLLECTOR
  • Transistor Application
  • SWITCHING
  • Gain Bandwidth Product
  • 85MHz
  • Polarity/Channel Type
  • PNP
  • Transistor Type
  • PNP
  • Collector Emitter Voltage (VCEO)
  • 400V
  • Max Collector Current
  • 500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 100 @ 500mA 10V
  • Current - Collector Cutoff (Max)
  • 50nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
  • 240mV @ 300mA, 1A
  • Collector Emitter Breakdown Voltage
  • 400V
  • Transition Frequency
  • 85MHz
  • Collector Emitter Saturation Voltage
  • -170mV
  • Max Breakdown Voltage
  • 400V
  • Collector Base Voltage (VCBO)
  • 400V
  • Emitter Base Voltage (VEBO)
  • -6V
  • Continuous Collector Current
  • -500mA
  • Height
  • 1.65mm

Download datasheets and manufacturer documentation for DIODES FZT958TA.

FZT958TA Overview


The DC current gain is the ratio of the base current to the collector current ?dc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 10V.With a collector emitter saturation voltage of -170mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 240mV @ 300mA, 1A.In order to achieve high efficiency, the continuous collector voltage should be kept at -500mA.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 85MHz is present in the part.There is a breakdown input voltage of 400V volts that it can take.Collector current can be as low as 500mA volts at its maximum.

FZT958TA Features


the DC current gain for this device is 100 @ 500mA 10V
a collector emitter saturation voltage of -170mV
the vce saturation(Max) is 240mV @ 300mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -500mA
a transition frequency of 85MHz


FZT958TA Applications


There are a lot of Diodes Incorporated
FZT958TA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

User Guide

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Step1:Prepare product

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Step2:Desiccant Protection

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Step3:Vacuum Packaging

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Step4:Individual Package

Step5:Anti-collision Filling

Step5:Anti-collision Filling

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Step6:Packaging Box

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