

DIODES FZT792ATA
Manufacturer No:
FZT792ATA
Manufacturer:
Package:
TO-261-4, TO-261AA
Description:
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
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FZT792ATA information
DIODES FZT792ATA technical specifications, attributes, parameters and parts with similar specifications to DIODES FZT792ATA.
- Type
- Parameter
- Factory Lead Time
- 13 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Number of Pins
- 4
- Weight
- 7.994566mg
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2006
- JESD-609 Code
- e3
- Pbfree Code
- no
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Voltage - Rated DC
- -70V
- Max Power Dissipation
- 2W
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Current Rating
- -2A
- Frequency
- 160MHz
- Base Part Number
- FZT792
- Number of Elements
- 1
- Element Configuration
- Single
- Power Dissipation
- 2W
- Case Connection
- COLLECTOR
- Transistor Application
- SWITCHING
- Gain Bandwidth Product
- 160MHz
- Polarity/Channel Type
- PNP
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 70V
- Max Collector Current
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 300 @ 10mA 2V
- Current - Collector Cutoff (Max)
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage
- 70V
- Transition Frequency
- 160MHz
- Collector Emitter Saturation Voltage
- -300mV
- Max Breakdown Voltage
- 70V
- Collector Base Voltage (VCBO)
- 75V
- Emitter Base Voltage (VEBO)
- 5V
- Height
- 1.65mm
- Length
- 6.7mm
- Width
- 3.7mm
Download datasheets and manufacturer documentation for DIODES FZT792ATA.
Environmental Information:
PCN Assembly/Origin:
FZT792ATA Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 2A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-2A).160MHz is present in the transition frequency.An input voltage of 70V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
FZT792ATA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 160MHz
FZT792ATA Applications
There are a lot of Diodes Incorporated
FZT792ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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