ONSEMI FQA34N20
Manufacturer No:
FQA34N20
Manufacturer:
ONSEMI
Package:
TO-3P-3, SC-65-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 75mOhm @ 17A, 10V ±30V 3100pF @ 25V 78nC @ 10V 200V TO-3P-3, SC-65-3
Quantity:
In Stock :9826
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Tue, Jun 16 - Wed, Jun 17, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQA34N20 Information
ONSEMI FQA34N20 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FQA34N20.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3, SC-65-3
- Supplier Device Package
- TO-3P
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- QFET®
- Published
- 2000
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Type
- Parameter
- Power Dissipation-Max
- 210W Tc
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 75mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id
- 5V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 3100pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 34A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 78nC @ 10V
- Drain to Source Voltage (Vdss)
- 200V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±30V
Download datasheets and manufacturer documentation for ONSEMI FQA34N20.
Datasheets:
FQA34N20 Description
FQA34N20 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 200V. The operating temperature of the FQA34N20 is -55°C~150°C TJ and its maximum power dissipation is 210W Tc. FQA34N20 has 3 pins and it is available in Tube packaging way.
FQA34N20 Features
High voltage and high reliability
High speed switching
Low forward voltage
FQA34N20 Applications
General purpose
Switching mode power supply
Free-wheeling diode for motor application
Power switching circuits
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