ONSEMI FDB24AN06LA0
Manufacturer No:
FDB24AN06LA0
Manufacturer:
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 19mOhm @ 40A, 10V ±20V 1850pF @ 25V 21nC @ 5V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
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FDB24AN06LA0 Information
ONSEMI FDB24AN06LA0 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FDB24AN06LA0.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package
- TO-263AB
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- PowerTrench®
- Published
- 2004
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Max Operating Temperature
- 175°C
- Min Operating Temperature
- -55°C
- Voltage - Rated DC
- 60V
- Technology
- MOSFET (Metal Oxide)
- Current Rating
- 36A
- Power Dissipation-Max
- 75W Tc
- Element Configuration
- Single
- Power Dissipation
- 75W
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 19mOhm @ 40A, 10V
Download datasheets and manufacturer documentation for ONSEMI FDB24AN06LA0.
Datasheets:
ReachStatement:
FDB24AN06LA0 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1850pF @ 25V.This device conducts a continuous drain current (ID) of 40A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 28 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 20mOhm, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
FDB24AN06LA0 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 28 ns
single MOSFETs transistor is 20mOhm
a 60V drain to source voltage (Vdss)
FDB24AN06LA0 Applications
There are a lot of ON Semiconductor
FDB24AN06LA0 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
FDB24AN06LA0 Relevant information
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