ONSEMI FJN965TA
ONSEMI FJN965TA

ONSEMI FJN965TA

Manufacturer No:

FJN965TA

Manufacturer:

ONSEMI

Package:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Description:

NPN 150°C TJ 1?A 1 Elements TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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FJN965TA information

ONSEMI FJN965TA technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FJN965TA.

  • Type
  • Parameter
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Number of Pins
  • 3
  • Supplier Device Package
  • TO-92-3
  • Weight
  • 240mg
  • Operating Temperature
  • 150°C TJ
  • Packaging
  • Tape & Box (TB)
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Max Operating Temperature
  • 150°C
  • Min Operating Temperature
  • -55°C
  • Voltage - Rated DC
  • 20V
  • Max Power Dissipation
  • 750mW
  • Current Rating
  • 5A
  • Frequency
  • 150MHz
  • Number of Elements
  • 1
  • Polarity
  • NPN
  • Element Configuration
  • Single
  • Power Dissipation
  • 750mW
  • Power - Max
  • 750mW
  • Gain Bandwidth Product
  • 150MHz
  • Transistor Type
  • NPN
  • Collector Emitter Voltage (VCEO)
  • 20V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 230 @ 500mA 2V
  • Current - Collector Cutoff (Max)
  • 1?A
  • Vce Saturation (Max) @ Ib, Ic
  • 1V @ 100mA, 3A
  • Collector Emitter Breakdown Voltage
  • 20V
  • Voltage - Collector Emitter Breakdown (Max)
  • 20V
  • Current - Collector (Ic) (Max)
  • 5A
  • Collector Emitter Saturation Voltage
  • 1V
  • Frequency - Transition
  • 150MHz
  • Collector Base Voltage (VCBO)
  • 40V
  • Emitter Base Voltage (VEBO)
  • 7V
  • hFE Min
  • 230
  • RoHS Status
  • RoHS Compliant
  • Lead Free
  • Lead Free

Download datasheets and manufacturer documentation for ONSEMI FJN965TA.

Datasheets:

ReachStatement:

FJN965TA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 230 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 100mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.TO-92-3 is the supplier device package for this product.This device displays a 20V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 5A volts.

FJN965TA Features


the DC current gain for this device is 230 @ 500mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
the supplier device package of TO-92-3


FJN965TA Applications


There are a lot of ON Semiconductor
FJN965TA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

User Guide

PURCHASE

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IMPORTANT NOTICE

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Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

Step6：Packaging Box

Step6：Packaging Box

SHIPPING COST

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

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