ONSEMI FDMT80060DC
Manufacturer No:
FDMT80060DC
Manufacturer:
ONSEMI
Package:
8-PowerVDFN
Description:
N-Channel Dual Cool<sup>TM</sup> 88 PowerTrench<sup>®</sup> MOSFET 60V, 292A, 1.1mΩ
Quantity:
In Stock :8736
Looking for price or availability? Send us an RFQ and our sales team will respond quickly.
Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Sat, Jun 6 - Sun, Jun 7, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FDMT80060DC Information
ONSEMI FDMT80060DC technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FDMT80060DC.
- Type
- Parameter
- Gate Level
- Standard
- ID Max (A)
- 292
- MSL Type
- 1
- MSL Temp (°C)
- 260
- Configuration
- Single
- OPN in older Technology
- 0
- RDS(on) Max @ VGS = 10 V (mΩ)
- 1.1
- Type
- Low-Medium Voltage
- Wide SOA Mosfets
- 0
- Package Name
- Power 88 Dual Cool
- Type
- Parameter
- RDS(on) Max @ VGS = 2.5 V (mΩ)
- -
- Silicon Family
- PowerTrench® T6
- V(BR)DSS Min (V)
- 60
- PD Max (W)
- 156
- Crss Typ (pF)
- 87
- Package Type
- DFNW-8
- Container Qty.
- 3000
- Qg Typ @ VGS = 4.5 V (nC)
- -
- Channel Polarity
- N-Channel
- Vgs (V)
- ±20
Download datasheets and manufacturer documentation for ONSEMI FDMT80060DC.
Datasheet:
Package Drawing:
This N-Channel MOSFET is produced using an advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Application
- Oring FET / Load Switch
- Synchronous Rectification
- DC-DC Conversion
Feature
- Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 43 A
- Max rDS(on) = 1.3 mΩ at VGS = 8 V, ID = 37 A
- Advanced Package and Silicon combination for low rDS(on) and high efficiency
- Next generation enhanced body diode technology, engineered for soft recovery
- Low profile 8x8mm MLP package
- MSL1 robust package design
- 100% UIL tested
- RoHS Compliant
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
