

ONSEMI MMBV109LT1G
Manufacturer No:
MMBV109LT1G
Manufacturer:
Package:
TO-236-3, SC-59, SOT-23-3
Description:
MMBV109 Single Surface Mount 32pF @ 3V 1MHz 125°C TJ Capacitance Ratio-6.5 3 Terminations SILICON DUAL TO-236-3, SC-59, SOT-23-3
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MMBV109LT1G information
ONSEMI MMBV109LT1G technical specifications, attributes, parameters and parts with similar specifications to ONSEMI MMBV109LT1G.
Type | Parameter |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Diode Element Material | SILICON |
Operating Temperature | 125°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2001 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | HIGH RELIABILITY |
HTS Code | 8541.10.00.80 |
Capacitance | 26pF |
Subcategory | Varactors |
Voltage - Rated DC | 30V |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 200mA |
Type | Parameter |
---|---|
Base Part Number | MMBV109 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 0.2W |
Diode Type | Single |
Breakdown Voltage | 30V |
Capacitance @ Vr, F | 32pF @ 3V 1MHz |
Reverse Voltage | 30V |
Frequency Band | VERY HIGH FREQUENCY |
Diode Capacitance-Nom | 29pF |
Capacitance Ratio | 6.5 |
Capacitance Ratio Condition | C3/C25 |
Quality Factor-Min | 200 |
Q @ Vr, F | 200 @ 3V, 50MHz |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
User Guide
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MMBV109LT1G Relevant information
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