ONSEMI FDMS3660S
Manufacturer No:
FDMS3660S
Manufacturer:
ONSEMI
Package:
8-PowerTDFN
Description:
Asymmetric Dual N-Channel PowerTrench<sup>®</sup> Power Stage MOSFET 30V
Quantity:
In Stock :7558
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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User Guide
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FDMS3660S Information
ONSEMI FDMS3660S technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FDMS3660S.
- Type
- Parameter
- OPN in older Technology
- 0
- Qrr Typ (nC)
- -
- MSL Temp (°C)
- 260
- Channel Polarity
- N-Channel
- RDS(on) Max @ VGS = 4.5 V (mΩ)
- Q1: 11.0, Q2: 2.2
- Coss Typ (pF)
- -
- MSL Type
- 1
- Container Qty.
- 3000
- Silicon Family
- PowerTrench® T1
- Qg Typ @ VGS = 10 V (nC)
- 29
- Type
- Parameter
- V(BR)DSS Min (V)
- 30
- RDS(on) Max @ VGS = 10 V (mΩ)
- Q1: 8, Q2: 1.8
- Case Outline
- 483AJ
- PD Max (W)
- Q1:2.2, Q2: 2.5
- Ciss Typ (pF)
- 4130
- Qg Typ @ VGS = 4.5 V (nC)
- 17
- Crss Typ (pF)
- -
- Type
- Low-Medium Voltage
- Wide SOA Mosfets
- 0
- Configuration
- Dual
Download datasheets and manufacturer documentation for ONSEMI FDMS3660S.
Datasheet:
Package Drawing:
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
Application
- Notebook PC
Feature
- Q1: N-Channel
Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A - Q2: N-Channel
Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A - Low inductance packaging shortens rise/fall times, resulting in lower switching losses
- MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
- RoHS Compliant
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12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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