ONSEMI FDFMA3P029Z
Manufacturer No:
FDFMA3P029Z
Manufacturer:
ONSEMI
Package:
6-VDFN Exposed Pad
Description:
MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 87m ? @ 3.3A, 10V 435pF @ 15V 10nC @ 10V 30V 6-VDFN Exposed Pad
Quantity:
In Stock :6242
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Tue, Jun 2 - Wed, Jun 3, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FDFMA3P029Z Information
ONSEMI FDFMA3P029Z technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FDFMA3P029Z.
- Type
- Parameter
- Package / Case
- 6-VDFN Exposed Pad
- Mounting Type
- Surface Mount
- Mount
- Surface Mount
- Number of Pins
- 6
- Published
- 2006
- Series
- PowerTrench®
- Packaging
- Cut Tape (CT)
- Operating Temperature
- -55°C~150°C TJ
- JESD-609 Code
- e4
- Part Status
- Discontinued
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Terminal Finish
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Technology
- MOSFET (Metal Oxide)
- Number of Elements
- 1
- Power Dissipation-Max
- 1.4W Ta
- Power Dissipation
- 1.4W
- FET Type
- P-Channel
- Rds On (Max) @ Id, Vgs
- 87m ? @ 3.3A, 10V
- Vgs(th) (Max) @ Id
- 3V @ 250?A
Download datasheets and manufacturer documentation for ONSEMI FDFMA3P029Z.
Datasheets:
PCN Design/Specification:
PCN Packaging:
FDFMA3P029Z Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 435pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3.3A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-30V. And this device has -30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 17 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.Operating this transistor requires a 30V drain to source voltage (Vdss).
FDFMA3P029Z Features
a continuous drain current (ID) of 3.3A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 17 ns
a 30V drain to source voltage (Vdss)
FDFMA3P029Z Applications
There are a lot of ON Semiconductor
FDFMA3P029Z applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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