ONSEMI FDD6N50FTF
Manufacturer No:
FDD6N50FTF
Manufacturer:
ONSEMI
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.15Ohm @ 2.75A, 10V ±30V 960pF @ 25V 19.8nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :6790
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FDD6N50FTF Information
ONSEMI FDD6N50FTF technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FDD6N50FTF.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package
- D-Pak
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- UniFET?
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Base Part Number
- FDD6N50
- Type
- Parameter
- Power Dissipation-Max
- 89W Tc
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 1.15Ohm @ 2.75A, 10V
- Vgs(th) (Max) @ Id
- 5V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 960pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 5.5A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 19.8nC @ 10V
- Drain to Source Voltage (Vdss)
- 500V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±30V
Download datasheets and manufacturer documentation for ONSEMI FDD6N50FTF.
FDD6N50FTF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 960pF @ 25V.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
FDD6N50FTF Features
a 500V drain to source voltage (Vdss)
FDD6N50FTF Applications
There are a lot of ON Semiconductor
FDD6N50FTF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
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In-stock SKU
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