ONSEMI FDC633N

Manufacturer No:

FDC633N

Manufacturer:

ONSEMI

Package:

SOT-23-6 Thin, TSOT-23-6

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 42mOhm @ 5.2A, 4.5V ±8V 538pF @ 10V 16nC @ 4.5V 30V SOT-23-6 Thin, TSOT-23-6

Quantity:

In Stock :6951

Looking for price or availability? Send us an RFQ and our sales team will respond quickly.

Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Fri, May 8 - Sat, May 9, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.

PURCHASE

Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.

MEANS OF PAYMENT

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RFQ (REQUEST FOR QUOTATIONS)

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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

FDC633N Information

ONSEMI FDC633N technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FDC633N.

Type
Parameter

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
SOT-23-6 Thin, TSOT-23-6

Number of Pins
6

Supplier Device Package
SuperSOT?-6

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
1998

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Type
Parameter

Max Operating Temperature
150°C

Min Operating Temperature
-55°C

Voltage - Rated DC
30V

Technology
MOSFET (Metal Oxide)

Current Rating
5.2A

Number of Elements
1

Power Dissipation-Max
1.6W Ta

Power Dissipation
1.6W

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
42mOhm @ 5.2A, 4.5V

Download datasheets and manufacturer documentation for ONSEMI FDC633N.

FDC633N Description

FDC633N is a 30v N-channel Enhancement Mode Field Effect Transistor. The transistor FDC633N is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high-density process is tailored to minimize on-state resistance. The onsemi is particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits where fast switching, low in-line power loss, and resistance to transients are needed in a very small outline surface mount package.

FDC633N Features

5.2A, 30V
RDS(ON) = 0.042? @ VGS= 4.5 V
RDS(ON) = 0.054? @ VGS= 2.5V
SuperSOT? -6 package design using a copper lead frame for superior thermal and electrical capabilities.
High-density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability.