ONSEMI FCPF20N60TYDTU
Manufacturer No:
FCPF20N60TYDTU
Manufacturer:
ONSEMI
Package:
TO-220-3 Full Pack, Formed Leads
Description:
MOSFET (Metal Oxide) N-Channel Tube 190mOhm @ 10A, 10V ±30V 3080pF @ 25V 98nC @ 10V 600V TO-220-3 Full Pack, Formed Leads
Quantity:
In Stock :8087
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Sun, Jun 14 - Mon, Jun 15, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FCPF20N60TYDTU Information
ONSEMI FCPF20N60TYDTU technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FCPF20N60TYDTU.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack, Formed Leads
- Supplier Device Package
- TO-220F-3 (Y-Forming)
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- SuperFET?
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 39W Tc
- Type
- Parameter
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id
- 5V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 3080pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 20A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 98nC @ 10V
- Drain to Source Voltage (Vdss)
- 600V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±30V
Download datasheets and manufacturer documentation for ONSEMI FCPF20N60TYDTU.
Datasheets:
FCPF20N60TYDTU Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3080pF @ 25V.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
FCPF20N60TYDTU Features
a 600V drain to source voltage (Vdss)
FCPF20N60TYDTU Applications
There are a lot of ON Semiconductor
FCPF20N60TYDTU applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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